论文信息 - Simulation of Schottky diode technology and performances for RFID application

Simulation of Schottky diode technology and performances for RFID application

Simulation results of Schottky diode technology in standard CMOS process and its I-V characteristics are presented. Investigated Schottky diode structure is considered as possible device for RFID application. Simulation was performed by use of Silvaco's ATHENA and ATLAS modules. Obtained results show acceptable output features satisfying RFID specifications.

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