Research on IGBT Dead Time Setting at Low Current

The dead time of Insulated Gate Bipolar Transistor is usually set by the calculation formula in Infenion technical documents. Since the calculation formula adopts the off time under rated current, and the off time decreases with the increase of current, the calculation formula may be smaller for low current, thus causing IGBT damage due to bridge arm penetration. In this paper, the influence of three different regions of IGBT punch-through on the device is analyzed firstly, then the criterion of IGBT dead time setting at low current is analyzed, and finally the influence of different dead time setting at different low current on IGBT punch-through is verified experimentally.