Combined SPICE-FEM analysis of electrothermal effects in InGaP/GaAs HBT devices and arrays for handset applications
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[1] Vincenzo d'Alessandro,et al. Evaluation of thermal balancing techniques in InGaP/GaAs HBT power arrays for wireless handset power amplifiers , 2013, Microelectron. Reliab..
[2] V. d'Alessandro,et al. Restabilizing mechanisms after the onset of thermal instability in bipolar transistors , 2006, IEEE Transactions on Electron Devices.
[3] Vincenzo d'Alessandro,et al. Influence of Scaling and Emitter Layout on the Thermal Behavior of Toward-THz SiGe:C HBTs , 2014, IEEE Transactions on Electron Devices.
[4] W. Liu,et al. The use of base ballasting to prevent the collapse of current gain in AlGaAs/GaAs heterojunction bipolar transistors , 1996 .
[5] S. Nelson,et al. Current gain collapse in microwave multifinger heterojunction bipolar transistors operated at very high power densities , 1993 .
[6] Anjan Chakravorty,et al. Compact Hierarchical Bipolar Transistor Modeling With HiCUM , 2010, International Series on Advances in Solid State Electronics and Technology.
[7] E. Jarvinen,et al. Bias circuits for GaAs HBT power amplifiers , 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).
[8] V. d'Alessandro,et al. A back-wafer contacted silicon-on-glass integrated bipolar process. Part II. A novel analysis of thermal breakdown , 2004, IEEE Transactions on Electron Devices.
[9] V. d'Alessandro,et al. Analysis of the Bipolar Current Mirror Including Electrothermal and Avalanche Effects , 2009, IEEE Transactions on Electron Devices.
[10] Wen-Chau Liu,et al. Thermal coupling in 2-finger heterojunction bipolar transistors , 1995 .
[11] V. d’Alessandro,et al. Analysis of Electrothermal Effects in Bipolar Differential Pairs , 2011, IEEE Transactions on Electron Devices.
[12] B. Li,et al. Nonlinear Transistor Model Parameter Extraction Techniques: Practical statistical simulation for efficient circuit design , 2011 .
[13] Alessandro Magnani,et al. Simulation comparison of InGaP/GaAs HBT thermal performance in wire-bonding and flip-chip technologies , 2017, Microelectron. Reliab..
[14] D. Celi,et al. Impact of layout and technology parameters on the thermal resistance of SiGe:C HBTs , 2010, 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
[15] M. Fresina,et al. Trends in GaAs HBTs for wireless and RF , 2011, 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
[16] Niccolò Rinaldi,et al. Avalanche multiplication and pinch-in models for simulating electrical instability effects in SiGe HBTs , 2010, Microelectron. Reliab..
[17] Mau-Chung Frank Chang,et al. Thermal design and simulation of bipolar integrated circuits , 1992 .
[18] V. d'Alessandro,et al. Theory of electrothermal behavior of bipolar transistors: part III-impact ionization , 2006, IEEE Transactions on Electron Devices.
[19] S. L. Miller. Ionization Rates for Holes and Electrons in Silicon , 1957 .
[20] V. d’Alessandro,et al. Thermal Design of Multifinger Bipolar Transistors , 2010, IEEE Transactions on Electron Devices.
[21] J. Sitch,et al. A new large signal HBT model , 1994 .
[22] Rudiger Quay,et al. Analysis and Simulation of Heterostructure Devices , 2004 .
[23] V. d'Alessandro,et al. Analysis of the Influence of Layout and Technology Parameters on the Thermal Impedance of GaAs HBT/BiFET Using a Highly-Efficient Tool , 2014, 2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
[24] U. Seiler,et al. Thermally triggered collapse of collector current in power heterojunction bipolar transistors , 1993, 1993 Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
[25] Wen-Chau Liu,et al. The collapse of current gain in multi-finger heterojunction bipolar transistors: its substrate temperature dependence, instability criteria, and modeling , 1994 .
[26] P.M. Asbeck,et al. Heating effects on the accuracy of HBT voltage comparators , 1987, IEEE Transactions on Electron Devices.
[27] V. d’Alessandro,et al. Experimental DC Extraction of the Base Resistance of Bipolar Transistors: Application to SiGe:C HBTs , 2016, IEEE Transactions on Electron Devices.
[28] V. d’Alessandro,et al. Analysis of Electrothermal and Impact-Ionization Effects in Bipolar Cascode Amplifiers , 2018, IEEE Transactions on Electron Devices.
[29] C. Popescu. Selfheating and thermal runaway phenomena in semiconductor devices , 1970 .
[30] V. d'Alessandro,et al. Theory of electrothermal behavior of bipolar transistors: part II-two-finger devices , 2005, IEEE Transactions on Electron Devices.
[31] V. d'Alessandro,et al. Theory of electrothermal behavior of bipolar transistors: Part I -single-finger devices , 2005, IEEE Transactions on Electron Devices.
[33] V. d'Alessandro,et al. Influence of Concurrent Electrothermal and Avalanche Effects on the Safe Operating Area of Multifinger Bipolar Transistors , 2009, IEEE Transactions on Electron Devices.
[34] P. R. Bryant,et al. Multiple equilibrium points and their significance in the second breakdown of bipolar transistors , 1981 .