论文信息 - A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes - 字舞流文

A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes

P. Mawby | M. Antoniou | N. Lophitis | K. Gyftakis | A. Arvanitopoulos | S. Perkins | Mike Jennings