Development of the next generation 1700V trench-gate FS-IGBT

This paper describes the next generation 1700V trench-gate FS-IGBT utilized the micro p-base structure for the first time. The new 1700V IGBT has been achieved that “better turn-on di/dt controllability”, “oscillation free turn-off” and “improved Von-Eoff trade-off relationship” as well as 600V and 1200V IGBTs. Furthermore, the critical thermal runaway temperature has successfully been elevated by the newly developed field-stop layer, which leads to increase of maximum junction temperature as high as 175 deg. C.

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