Linear and nonlinear mode interactions in a semiconductor ring laser

In order to understand and explain recently reported nonlinear behaviors in semiconductor ring lasers (SRLs) and to further design novel functional devices, a multimode model has been developed for linear and nonlinear interactions between modes in an SRL lasing unidirectionally. The model includes population pulsation, spectral hole burning, carrier heating, and four-wave mixing effects. Heterodyne detection has been used to make high-resolution measurements of the lasing spectra of an SRL in which the individual resonances associated with the coupled eigenvalues can be observed. By fitting these high-resolution spectra to the model, we have extracted a number of key parameters characterizing the coupling mechanisms in the device and the semiconductor gain medium. Using these parameters, the model generates device characteristics in very good agreement with experimental results, which validate its use for future device design and optimization.

[1]  B. Miller,et al.  Four-wave mixing wavelength conversion efficiency in semiconductor traveling-wave amplifiers measured to 65 nm of wavelength shift , 1994, IEEE Photonics Technology Letters.

[2]  Antonio Mecozzi,et al.  Four-wave mixing in traveling-wave semiconductor amplifiers , 1995 .

[3]  Antonio Mecozzi,et al.  4.3 terahertz four‐wave mixing spectroscopy of InGaAsP semiconductor amplfiers , 1994 .

[4]  J. Mørk,et al.  Wave mixing in semiconductor laser amplifiers due to carrier heating and spectral-hole burning , 1994 .

[5]  Siyuan Yu,et al.  Controllable and stable mode selection in a semiconductor ring laser by injection locking , 2003, Conference on Lasers and Electro-Optics, 2003. CLEO '03..

[6]  M. Yamada,et al.  Influence of instantaneous mode competition on the dynamics of semiconductor lasers , 2002 .

[7]  U. Herzog.  Longitudinal mode interaction in semiconductor lasers due to nonlinear gain suppression and four-wave mixing , 1991 .

[8]  T. P. Lee,et al.  Analysis of origin of nonlinear gain in 1.5 μm semiconductor active layers by highly nondegenerate four‐wave mixing , 1994 .

[9]  Robert B. Darling,et al.  Effects of nonlinear gain on mode-hopping in semiconductor laser diodes , 1995 .

[10]  Jean-Pierre Weber,et al.  Optimization of the carrier-induced effective index change in InGaAsP waveguides-application to tunable Bragg filters , 1994 .

[11]  Mandel,et al.  Dynamics of a ring-laser gyroscope with backscattering. , 1992, Physical review. A, Atomic, molecular, and optical physics.

[12]  Govind P. Agrawal,et al.  Gain nonlinearities in semiconductor lasers: Theory and application to distributed feedback lasers , 1987 .

[13]  Marc Sorel,et al.  Unidirectional bistability in semiconductor waveguide ring lasers , 2002 .

[14]  Joseph M. Ballantyne,et al.  Spatial beam switching and bistability in a diode ring laser , 2000 .

[15]  J. P. Woerdman,et al.  Mode coupling in a He-Ne ring laser with backscattering. , 1990, Physical review. A, Atomic, molecular, and optical physics.

[16]  Charles Howard Henry,et al.  Longitudinal mode self‐stabilization in semiconductor lasers , 1982 .

[17]  Minoru Yamada,et al.  Analysis of gain suppression in undoped injection lasers , 1981 .

[18]  H. Weber,et al.  Four-wave mixing in semiconductor optical amplifiers for frequency conversion and fast optical switching , 1997 .

[19]  M. Sorel,et al.  Alternate oscillations in semiconductor ring lasers. , 2002, Optics letters.

[20]  Marc Sorel,et al.  Operating regimes of GaAs-AlGaAs semiconductor ring lasers: experiment and model , 2003 .

[21]  M. Smit,et al.  A fast low-power optical memory based on coupled micro-ring lasers , 2004, Nature.

[22]  Daniel T. Cassidy,et al.  Technique for measurement of the gain spectra of semiconductor diode lasers , 1984 .

[23]  Erich P. Ippen,et al.  Femtosecond time domain measurements of group velocity dispersion in diode lasers at 1.5 mu m , 1992 .