Resistive Switching Mechanism in Zn x Cd 1−x S Nonvolatile Memory Devices

Nonvolatile information storage devices based on an abrupt resistance switch when an electric bias is applied are very attractive for future memory applications. Recently, such a resistance switch was described in ferroelectric ZnxCd1�xS, but the mechanism of switching remains controversial. Here, we present results that elucidate the mechanism, showing that a metal needs to be easily oxidized and is capable of diffusing into the ZnCdS film as a cation impurity forming a filamentary metallic conduction path. Index Terms—Chalcogenide, nonvolatile memory, resistive switching, ZnCdS.

[1]  I. Yoo,et al.  Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications , 2005, IEEE Electron Device Letters.

[2]  D. Bremaud,et al.  Electrical current distribution across a metal–insulator–metal structure during bistable switching , 2001, cond-mat/0104452.

[3]  K. Terabe,et al.  Quantized conductance atomic switch , 2005, Nature.

[4]  L. C. Burton,et al.  ZnxCd1−xS films for use in heterojunction solar cells , 1976 .

[5]  F. A. Kröger,et al.  The defect structure of silver-doped CdS , 1975 .

[6]  T. Hasegawa,et al.  Nanometer-scale switches using copper sulfide , 2003 .

[7]  California,et al.  Field-induced resistive switching in metal-oxide interfaces , 2004, cond-mat/0402687.

[8]  H. Woodbury.  Diffusion and Solubility of Ag in CdS , 1965 .

[9]  C. Gerber,et al.  Current-driven insulator–conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals , 2001 .

[10]  T. Kawai,et al.  Determination of the optimal cation composition of ferroelectric (ZnxCd1−x)S thin films for applications to silicon-based nonvolatile memories , 2002 .

[11]  S. Seo,et al.  Reproducible resistance switching in polycrystalline NiO films , 2004 .

[12]  Chih-Yi Liu,et al.  Bistable resistive switching of a sputter-deposited Cr-doped SrZrO/sub 3/ memory film , 2005, IEEE Electron Device Letters.

[13]  Byung Joon Choi,et al.  Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition , 2005 .

[14]  M. Mitkova,et al.  Nonvolatile memory based on solid electrolytes , 2004, Proceedings. 2004 IEEE Computational Systems Bioinformatics Conference.

[15]  W. E. Beadle,et al.  Switching properties of thin Nio films , 1964 .

[16]  C. Gerber,et al.  Reproducible switching effect in thin oxide films for memory applications , 2000 .