Stress-induced formation of high-density amorphous carbon thin films

Amorphous carbon films with high sp3 content were deposited by magnetron sputtering and intense argon ion plating. Above a compressive stress of 13 GPa a strong increase of the density of the carbon films is observed. We explain the increase of density by a stress-induced phase transition of sp2 configured carbon to sp3 configured carbon. Preferential sputtering of the sp2 component in the carbon films plays a minor role compared to the sp2⇒sp3 transition at high compressive stress formed during the deposition process. Transmission electron microscopy shows evidence of graphitic regions in the magnetron sputtered/Ar plated amorphous carbon thin films. Differences in the microstructure of the tetrahedral amorphous carbon (ta–C) films deposited by filtered arc and mass selected ion beam; and those films deposited using magnetron sputtering combined with intense ion plating can be used to explain the different electronic and optical properties of both kinds of ta–C films.

[1]  G. Betz,et al.  Sputtering by particle bombardment , 1983 .

[2]  C. Davis,et al.  A simple model for the formation of compressive stress in thin films by ion bombardment , 1993 .

[3]  J. Bruley,et al.  Sputter deposition of dense diamond-like carbon films at low temperature , 1991 .

[4]  Lifshitz,et al.  Subplantation model for film growth from hyperthermal species: Application to diamond. , 1989, Physical review letters.

[5]  S. Solin,et al.  “Diamond-like” 3-fold coordinated amorphous carbon , 1980 .

[6]  W. Kulisch,et al.  Mechanisms in ion induced c-BN growth , 1994 .

[7]  K. Müller,et al.  Model for ion‐assisted thin‐film densification , 1986 .

[8]  John Robertson,et al.  Deposition mechanisms for promoting sp3 bonding in diamond-like carbon , 1993 .

[9]  W. Nellis,et al.  Shock-induced martensitic transformation of highly oriented graphite to diamond , 1992 .

[10]  P. E. Mijnarends,et al.  Microstructural evolution of non-hydrogenated amorphous carbon under ion beam assistance , 1994 .

[11]  S. Ulrich,et al.  Preparation of cubic boron nitride films by radio frequency magnetron sputtering and radio frequency ion plating , 1996 .

[12]  Sven Ulrich,et al.  Raman spectroscopy on amorphous carbon films , 1996 .

[13]  J. Biersack,et al.  A Monte Carlo computer program for the transport of energetic ions in amorphous targets , 1980 .

[14]  Oshima,et al.  X-ray diffraction and transmission-electron microscopy of natural polycrystalline graphite recovered from high pressure. , 1994, Physical review. B, Condensed matter.

[15]  S. Ulrich,et al.  Radio frequency ion plating-induced phase transition from h-BN to nanocrystalline c-BN , 1995 .

[16]  J. Robertson,et al.  Tetrahedral amorphous carbon films prepared by magnetron sputtering and dc ion plating , 1996 .

[17]  Jung,et al.  Preparation and properties of highly tetrahedral hydrogenated amorphous carbon. , 1996, Physical review. B, Condensed matter.

[18]  Grossman,et al.  Substantiation of subplantation model for diamondlike film growth by atomic force microscopy. , 1994, Physical review letters.

[19]  Robertson,et al.  Properties of filtered-ion-beam-deposited diamondlike carbon as a function of ion energy. , 1993, Physical review. B, Condensed matter.

[20]  S. Aisenberg,et al.  Ion‐Beam Deposition of Thin Films of Diamondlike Carbon , 1971 .

[21]  H. Windischmann.  An intrinsic stress scaling law for polycrystalline thin films prepared by ion beam sputtering , 1987 .

[22]  S. Prawer,et al.  Compressive stress induced formation of preferred orientation in glassy carbon following high-dose C+ implantation , 1995 .

[23]  H. Ehrhardt,et al.  Characterization of the sp2 bonds network in a-C:H layers with nuclear magnetic resonance, electron energy loss spectroscopy and electron spin resonance , 1991 .

[24]  W. Milne,et al.  Erratum: ‘‘Nanocrystallites in tetrahedral amorphous carbon films’’ [Appl. Phys. Lett. 69, 491 (1996)] , 1996 .

[25]  T. Takagi,et al.  Transparent carbon film prepared by mass‐separated negative‐carbon‐ion‐beam deposition , 1987 .

[26]  P. Gaskell,et al.  Atomic structure of tetrahedral amorphous carbon , 1993 .

[27]  Utsumi,et al.  High-pressure in situ x-ray-diffraction study of the phase transformation from graphite to hexagonal diamond at room temperature. , 1992, Physical review. B, Condensed matter.

[28]  H. Richardson,et al.  Effect of substrate bias on the properties of diamondlike carbon films deposited using unbalanced magnetron sputtering , 1995 .

[29]  D. Muller,et al.  Synthesis, structure and applications of amorphous diamond , 1991 .

[30]  McKenzie,et al.  Compressive-stress-induced formation of thin-film tetrahedral amorphous carbon. , 1991, Physical review letters.

[31]  J. Cuomo,et al.  Pressure and plasma effects on the properties of magnetron sputtered carbon films , 1987 .

[32]  R. Behrisch,et al.  Sputtering by Particle Bombardment III , 1981 .

[33]  James P. Doyle,et al.  Vapor deposition processes for amorphous carbon films with sp3 fractions approaching diamond , 1991 .

[34]  M. Tamor,et al.  Raman ``fingerprinting'' of amorphous carbon films , 1994 .

[35]  W. Eckstein,et al.  Subplantation model for film growth from hyperthermal species. , 1990, Physical review. B, Condensed matter.