Two-dimensional MOSFET simulation with energy transport phenomena

A two dimensional energy transport oriented MOSFET simulator was developed which is based on Boltzmann transport equation with relaxation time approximation. Full two dimensional energy distribution was stably calculated by introducing several algorithms. It is useful for discussing hot carrier effects in short channel MOSFETs. It was predicted that, even in Si, velocity overshooting effects are important in determining MOSFET characteristics, when Leffis less than 0.25µm.