Preparation of ohmic n-type cubic boron nitride contacts

Ohmic electrodes in the form of n-type (Si-doped) cubic boron nitride (c-BN) bulk crystals were fabricated by utilizing a covering technique, depositing Ti(10 nm)/Mo/(20 nm)/Pt–Au(200 nm) ohmic contact metal on both the sides of the c-BN substrate. The size of the specimen electrode was 100 × 100 μ m2 on one side and 300 × 300 μ m2 on the other side. Measurements on the specimen were made using a specially made device. Linear current–voltage characteristics were obtained. It is considered that the contact between the Ti-and Si-doped c-BN was ohmic.