High performance gate first HfSiON dielectric satisfying 45nm node requirements
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G. Pant | B.H. Lee | C. Huffman | J. Peterson | B. Gnade | C. Huffman | J. H. Sim | T.P. Ma | M.J. Kim | M.A. Quevedo-Lopez | J.H. Sim | S.A. Krishnan | D. Kirsch | C.H.J. Li | J.J. Peterson | B.E. Gnade | R.M. Wallace | D. Guo | H. Bu | G. Pant | D. Kirsch | H. Bu | D. Guo | Manuel Quevedo-Lopez | Siddarth A. Krishnan | C.H.J. Li | Byoung Hun Lee | M. J. Kim | Robert M. Wallace | T. Ma
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