Advances in VCSELs for communication and sensing

Recent advances in VCSELs for communication and sensing are reviewed, emphasizing the development of high speed VCSELs for datacom systems and high power single-mode VCSELs for sensing applications requiring high spectral purity and coherence.

[1]  Johan S. Gustavsson,et al.  High-Speed, Low-Current-Density 850 nm VCSELs , 2009 .

[2]  High fundamental mode power, high speed InAlGaAs/AlGaAs 1310 and 1550-nm wafer-fused VCSELs , 2008, 2008 Asia Optical Fiber Communication & Optoelectronic Exposition & Conference.

[3]  Åsa Haglund,et al.  High-power fundamental-mode and polarisation stabilised VCSELs using sub-wavelength surface grating , 2005 .

[4]  Alex Mutig,et al.  22-Gb/s Long Wavelength VCSELs. , 2009, Optics express.

[5]  Johan S. Gustavsson,et al.  Speed enhancement of VCSELs by photon lifetime reduction , 2010 .

[6]  Friedhelm Hopfer,et al.  32 Gbit/s multimode fibre transmission using high-speed, low current density 850 nm VCSEL , 2009 .

[7]  Single-Mode Oxide-Confined VCSEL for Printers and Sensors , 2006, 2006 1st Electronic Systemintegration Technology Conference.

[8]  Roger King,et al.  Volume production of polarization controlled single-mode VCSELs , 2008, SPIE OPTO.

[9]  S. Arafin,et al.  Single-mode electrically pumped GaSb-based VCSELs emitting continuous-wave at 2.4 and 2.6 μm , 2009 .

[10]  J. Gustavsson,et al.  Single fundamental-mode output power exceeding 6 mW from VCSELs with a shallow surface relief , 2004, IEEE Photonics Technology Letters.

[11]  Takayoshi Anan,et al.  High Speed 1.1-µm-Range InGaAs-Based VCSELs , 2009, IEICE Trans. Electron..

[12]  Yu-Chia Chang,et al.  Efficient, High-Data-Rate, Tapered Oxide-Aperture Vertical-Cavity Surface-Emitting Lasers , 2009, IEEE Journal of Selected Topics in Quantum Electronics.

[13]  Takayoshi Anan,et al.  25 Gbit/s 100°C operation of highly reliable InGaAs/GaAsP-VCSELs , 2009 .

[14]  W. Hofmann,et al.  Short-Cavity Long-Wavelength VCSELs With Modulation Bandwidths in Excess of 15 GHz , 2009, IEEE Photonics Technology Letters.

[15]  Nikolai N. Ledentsov,et al.  120°C 20 Gbit/s operation of 980 nm VCSEL , 2008 .

[16]  J.-W. Shi,et al.  High-Power and High-Speed Zn-Diffusion Single Fundamental-Mode Vertical-Cavity Surface-Emitting Lasers at 850-nm Wavelength , 2008, IEEE Photonics Technology Letters.

[17]  T. Mukai,et al.  Improvement in Lasing Characteristics of GaN-based Vertical-Cavity Surface-Emitting Lasers Fabricated Using a GaN Substrate , 2009 .

[18]  Mikhail V. Maximov,et al.  Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s , 2009 .