Suppression of corner effects in wide-channel triple-gate bulk FinFETs

This paper presents a method of eliminating corner effects in triple-gate bulk FinFETs. The parasitic device in FinFET's corners can be turned off by increasing body doping in corner regions by corner implantation. Corner implantation described in this work does not require additional masks, rotation or tilt. This method is investigated in idealized (with rectangular cross-section of the fin) and realistic (with rounded top corners of the fin) triple-gate bulk FinFETs and has shown considerable improvements: kink effect in transfer characteristics is completely eliminated, threshold voltage increased by up to 0.43V, subthreshold swing and drain-induced barrier-lowering decreased to values under 95mV/dec and 16mV/V, respectively. Optimization is performed on the realistic rounded-corner FinFET structure to find the proper body doping and corner implantation peak values for acceptable threshold voltage and on-state current.

[1]  C. Hu,et al.  FinFET-a self-aligned double-gate MOSFET scalable to 20 nm , 2000 .

[2]  Yuan Taur,et al.  Fundamentals of Modern VLSI Devices , 1998 .

[3]  J. Bokor,et al.  FinFET-a quasi-planar double-gate MOSFET , 2001, 2001 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC (Cat. No.01CH37177).

[4]  Bin Yu,et al.  FinFET scaling to 10 nm gate length , 2002, Digest. International Electron Devices Meeting,.

[5]  S. Hareland,et al.  Tri-Gate fully-depleted CMOS transistors: fabrication, design and layout , 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).

[6]  Tomislav Suligoj,et al.  Improving bulk FinFET DC performance in comparison to SOI FinFET , 2009 .

[7]  S. Wolf,et al.  Silicon Processing for the VLSI Era , 1986 .

[8]  Jean-Pierre Colinge,et al.  Quantum-mechanical effects in nanometer scale MuGFETs , 2008 .

[9]  U-In Chung,et al.  Body-tied triple-gate NMOSFET fabrication using bulk Si wafer , 2005 .

[10]  S. Decoutere,et al.  Gate voltage and geometry dependence of the series resistance and of the carrier mobility in FinFET devices , 2008 .