An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors

Abstract A compact analytical approach for calculation of effective channel length in graphene nanoribbon field effect transistor (GNRFET) is presented in this paper. The modelling is begun by applying Gauss’s law and solving Poisson’s equation. We include the effect of quantum capacitance and GNR’s intrinsic carrier concentration in our model. Based on the model the effects of several parameters such as drain-source voltage, channel length, and oxide thickness are studied on the length of effective channel in GNRFETs.

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