A theory of the Hooge parameters of solid-state devices

Handel's theory of quantum 1/f noise is applied to the Hooge parameters of bipolar transistors and various types of FET's. Very low values for the Hooge parameters α<inf>Hn</inf>and α<inf>Hp</inf>for electrons and holes are obtained. For several cases the experimental data seem to agree with the predicted theoretical limit whereas in other cases the mobility 1/f noise is masked by other noise sources. In good GaAs devices the predicted quantum limit for α<inf>Hn</inf>is reached within a factor 5-10. The theory is also applied to the Hg<inf>1-x</inf>Cd<inf>x</inf>Te materials and devices. Because of the very low effective masses involved, the theory predicts values as high as 2 × 10^-4-2 × 10^-5, depending on<tex>x</tex>. What remains presently unexplained are the high values of α<inf>H</inf>for semiconductor resistors and long p-n diodes.