Monolithic integration of III–V HEMT and Si-CMOS through TSV-less 3D wafer stacking
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Chuan Seng Tan | David Kohen | Shuyu Bao | C. S. Tan | E. Fitzgerald | K. Lee | K. Lee | Shuyu Bao | Kwang Hong Lee | D. Kohen | Kenneth Eng Kian Lee | Eugene Fitzgerald | Chieh Chih Huang | Chieh-Chih Huang
[1] H. Wong,et al. Nanoscale CMOS - Proceedings of the IEEE , 1999 .
[2] Yonggang Huang,et al. Waterproof AlInGaP optoelectronics on stretchable substrates with applications in biomedicine and robotics. , 2010, Nature materials.
[3] D. Nguyen,et al. High mobility NMOSFET structure with high-/spl kappa/ dielectric , 2005, IEEE Electron Device Letters.
[4] Lloyd R. Harriott,et al. Limits of lithography , 2001, Proc. IEEE.
[5] Y. Kamata,et al. High-k/Ge MOSFETs for future nanoelectronics , 2008 .
[6] Mitsuru Takenaka,et al. Formation of III–V-on-insulator structures on Si by direct wafer bonding , 2013 .
[7] T. Egawa,et al. Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate , 2013 .
[8] David J. Frank,et al. Nanoscale CMOS , 1999, Proc. IEEE.
[9] G. Roelkens,et al. Hybrid III-V semiconductor/silicon nanolaser. , 2011, Optics express.
[10] Hyunhyub Ko,et al. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors , 2010, Nature.
[11] 裕幸 飯田,et al. International Technology Roadmap for Semiconductors 2003の要求清浄度について - シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について - , 2004 .
[12] Yasuhiko Arakawa,et al. Electrically pumped 1.3 microm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer. , 2010, Optics express.
[13] K. Kato,et al. PLC hybrid integration technology and its application to photonic components , 2000, IEEE Journal of Selected Topics in Quantum Electronics.
[14] Low-threshold thin-film III-V lasers bonded to silicon with front and back side defined features. , 2009, Optics letters.
[15] J. Rogers,et al. GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies , 2010, Nature.
[16] Hong Wang,et al. Demonstration of Submicron-Gate AlGaN/GaN High-Electron-Mobility Transistors on Silicon with Complementary Metal–Oxide–Semiconductor-Compatible Non-Gold Metal Stack , 2012 .
[17] W. E. Hoke,et al. Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit , 2012 .
[18] Di Liang,et al. Recent progress in lasers on silicon , 2010 .
[19] S. Deleonibus. Physical and Technological Limitations of NanoCMOS Devices to the End of the Roadmap and Beyond , 2006, Electronic Device Architectures for the Nano-CMOS Era.
[20] Yasuhiko Arakawa,et al. Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate. , 2009, Optics express.
[21] C. S. Tan,et al. Homogeneous Chip to Wafer Bonding of InP-Al2O3-Si Using UV/O3 Activation , 2014 .
[22] N. Taoka,et al. High mobility Ge pMOSFETs with 0.7 nm ultrathin EOT using HfO2/Al2O3/GeOx/Ge gate stacks fabricated by plasma post oxidation , 2012, 2012 Symposium on VLSI Technology (VLSIT).
[23] Hyung-Seok Lee,et al. Wafer-Level Heterogeneous Integration of GaN HEMTs and Si (100) MOSFETs , 2012, IEEE Electron Device Letters.
[24] J. Nishizawa,et al. On the Reaction Mechanism of GaAs MOCVD , 1983 .