In Situ Patterning of Ultrasharp Dopant Profiles in Silicon.
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Michelle Y. Simmons | Alexei Zakharov | Jill A. Miwa | Justin W. Wells | A. Zakharov | M. Simmons | D. Evans | Y. Niu | J. Miwa | T. Schmidt | S. Cooil | F. Mazzola | J. Wells | H. Klemm | G. Peschel | Thomas Schmidt | S. P. Cooil | Federico Mazzola | Hagen W. Klemm | Gina Peschel | Yuran R. Niu | D. Andrew Evans | M. Y. Simmons | Federico Mazzola | Hagen W. Klemm | Yuran Niu | Alexei Zakharov | D. A. Evans | Jill A. Miwa | Justin W. Wells
[1] M. Simmons,et al. Direct measurement of the band structure of a buried two-dimensional electron gas. , 2013, Physical review letters.
[2] M. Y. Simmons,et al. A single atom transistor , 2012, 2012 IEEE Silicon Nanoelectronics Workshop (SNW).
[3] Paul S. Peercy,et al. The drive to miniaturization , 2000, Nature.
[4] L. Oberbeck,et al. The use of etched registration markers to make four-terminal electrical contacts to STM-patterned nanostructures , 2005, Nanotechnology.
[5] M. Simmons,et al. Use of a scanning electron microscope to pattern large areas of a hydrogen resist for electrical contacts , 2007 .
[6] A. G. Fowler,et al. Two-dimensional architectures for donor-based quantum computing , 2006 .
[7] D. J. Carter,et al. Phosphorus δ-doped silicon: mixed-atom pseudopotentials and dopant disorder effects , 2011, Nanotechnology.
[8] B. E. Kane. A silicon-based nuclear spin quantum computer , 1998, Nature.
[9] H. Tsai,et al. Comparison of thermal reactions of phosphine on Ge(1 0 0) and Si(1 0 0) by high-resolution core-level photoemission , 2001 .
[10] Kevin C. Prince,et al. SPELEEM: Combining LEEM and Spectroscopic Imaging , 1998 .
[11] Michelle Y. Simmons,et al. Thermal dissociation and desorption of PH3 on Si(001): A reinterpretation of spectroscopic data , 2006 .
[12] L. Oberbeck,et al. Scanning probe microscopy for silicon device fabrication , 2005 .
[13] Andreas Fuhrer,et al. Optimizing dopant activation in Si:P double δ-layers , 2010 .
[14] M. Simmons,et al. Low resistivity, super-saturation phosphorus-in-silicon monolayer doping , 2014 .
[15] N. Tolk,et al. Absolute total cross sections for electron-stimulated desorption of hydrogen and deuterium from silicon(111) measured by second harmonic generation , 2000 .
[16] Michelle Y. Simmons,et al. Toward Atomic-Scale Device Fabrication in Silicon Using Scanning Probe Microscopy , 2004 .
[17] H. Duan,et al. Resolution limits of electron-beam lithography toward the atomic scale. , 2013, Nano letters (Print).
[18] F. G. Allen,et al. Work Function, Photoelectric Threshold, and Surface States of Atomically Clean Silicon , 1962 .
[19] R. Rahman,et al. Spin readout and addressability of phosphorus-donor clusters in silicon , 2012, Nature Communications.
[20] E. Bauer,et al. Surface studies by low-energy electron microscopy (LEEM) and conventional UV photoemission electron microscopy (PEEM) , 1989 .
[21] M. Simmons,et al. Disentangling phonon and impurity interactions in δ-doped Si(001) , 2014 .
[22] L. Oberbeck,et al. Effective removal of hydrogen resists used to pattern devices in silicon using scanning tunneling microscopy , 2005 .
[23] D. J. Carter,et al. Determining the electronic confinement of a subsurface metallic state. , 2014, ACS nano.
[24] D. Lin,et al. Interaction of phosphine with Si(100) from core-level photoemission and real-time scanning tunneling microscopy , 2000 .
[25] Michelle Simmons,et al. Exploring the limits of N-type ultra-shallow junction formation. , 2013, ACS nano.
[26] D. Lin,et al. Thermal reactions of phosphine with Si(100): a combined photoemission and scanning-tunneling-microscopy study , 1999 .
[27] D. J. Carter,et al. Valley splitting in a silicon quantum device platform. , 2014, Nano letters.
[28] Michelle Y. Simmons,et al. A surface code quantum computer in silicon , 2015, Science Advances.
[29] K. Oura,et al. Electron-stimulated desorption of hydrogen from H/Si(001)-1×1 surface studied by time-of-flight elastic recoil detection analysis , 1999 .
[30] P. Feibelman,et al. Ion desorption by core-hole Auger decay , 1978 .
[31] L. Oberbeck,et al. Influence of doping density on electronic transport in degenerate Si:Pδ-doped layers , 2006 .
[32] D. E. Jesson,et al. Surface Electron Microscopy of Ga Droplet Dynamics on GaAs (001) , 2010 .
[33] L. Hollenberg,et al. Single-shot readout of an electron spin in silicon , 2010, Nature.
[34] M. Simmons,et al. The Impact of Dopant Segregation on the Maximum Carrier Density in Si:P Multilayers. , 2015, ACS nano.
[35] M. Simmons,et al. Microscopic four-point-probe resistivity measurements of shallow, high density doping layers in silicon , 2012 .
[36] ERIC M. VOGEL,et al. Technology and metrology of new electronic materials and devices. , 2007, Nature nanotechnology.
[37] Gerhard Klimeck,et al. Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting , 2013, Nature Communications.