3.3 kV SiC JBS diodes employing a P2O5 surface passivation treatment to improve electrical characteristics
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J. Ortiz-Gonzalez | P. Mawby | V. Pathirana | T. Trajkovic | V. Shah | P. Gammon | Y. Bonyadi | R. Wu | O. Vavasour | G. Baker | A. B. Renz | Xiaoyun Rong