GaAs MESFET small signal amplifier intermodulation distortion improvement by the second harmonic termination

The third-order intermodulation distortion in small signal MESFET amplifier has been analysed by means of the Volterra series representation. Some of the results for reactively terminated amplifier ports at the second harmonic frequency are presented. It has been shown that the third-order IMD products are sensitive to the second harmonic reactances at the transistor input and output terminals.