Hydrogen model for radiation-induced interface states in SiO2-on-Si Structures: A review of the evidence
暂无分享,去创建一个
[1] Patrick M. Lenahan,et al. Hole traps and trivalent silicon centers in metal/oxide/silicon devices , 1984 .
[2] S. Wang,et al. Low−temperature irradiation effects in SiO2−insulated MIS devices , 1975 .
[3] Dennis B. Brown,et al. Time dependence of radiation‐induced interface trap formation in metal‐oxide‐semiconductor devices as a function of oxide thickness and applied field , 1991 .
[4] Griscom. Self-trapped holes in amorphous silicon dioxide. , 1989, Physical review. B, Condensed matter.
[5] R. Weeks,et al. Electron Spin Resonance of Irradiated Quartz: Atomic Hydrogen , 1965 .
[6] C. Magee,et al. Current-induced hydrogen migration and interface trap generation in aluminum-silicon dioxide-silicon capacitors , 1984 .
[7] R. A. Kushner,et al. Total dose radiation hardness of MOS devices in hermetic ceramic packages , 1988 .
[9] Patrick M. Lenahan,et al. Defects and impurities in thermal oxides on silicon , 1982 .
[10] Brower Kl,et al. Kinetics of H2 passivation of Pb centers at the (111) Si-SiO2 interface. , 1988 .
[11] F. B. McLean. A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures , 1980, IEEE Transactions on Nuclear Science.
[12] Tsai,et al. Medium-range structural order and fractal annealing kinetics of radiolytic atomic hydrogen in high-purity silica. , 1989, Physical review. B, Condensed matter.
[13] R. C. Weast. CRC Handbook of Chemistry and Physics , 1973 .
[14] K. L. Brower,et al. Chemical kinetics of hydrogen and (111)Si-SiO2 interface defects , 1990 .
[15] David L. Griscom,et al. Diffusion of radiolytic molecular hydrogen as a mechanism for the post‐irradiation buildup of interface states in SiO2‐on‐Si structures , 1985 .
[16] R. H. Silsbee,et al. Electron Spin Resonance in Neutron‐Irradiated Quartz , 1961 .
[17] E. Poindexter,et al. Characterization of Si/SiO2 interface defects by electron spin resonance , 1983 .
[18] Brower. Dissociation kinetics of hydrogen-passivated (111) Si-SiO2 interface defects. , 1990, Physical review. B, Condensed matter.
[19] Kenji Fueki,et al. Selective O–H Bond Cleavage in the Radiolysis of Quartz , 1986 .
[20] N. Saks,et al. Interface trap formation via the two-stage H/sup +/ process , 1989 .
[21] R. K. Lawrence,et al. Post-irradiation behavior of the interface state density and the trapped positive charge , 1990 .
[22] Donald R. Young,et al. The effects of water on oxide and interface trapped charge generation in thermal SiO2 films , 1981 .
[23] K. L. Brower. Kinetics of H/sub 2/ passivation of P/sub b/ centers at the (111) Si-SiO/sub 2/ interface , 1988 .
[24] David L. Griscom,et al. Formation of interface traps in MOSFETs during annealing following low temperature irradiation , 1988 .
[25] Patrick M. Lenahan,et al. An electron spin resonance study of radiation‐induced electrically active paramagnetic centers at the Si/SiO2 interface , 1983 .
[26] A. Revesz. The Role of Hydrogen in SiO2 Films on Silicon , 1979 .
[27] N. Saks,et al. Observation of H/sup +/ motion during interface trap formation , 1990 .
[28] D. B. Brown,et al. Nature of Radiation-Induced Point Defects in Amorphous SiO2 and their Role in SiO2-ON-Si Structures , 1988 .
[29] W. C. Johnson,et al. Relationship between x‐ray‐produced holes and interface states in metal‐oxide‐semiconductor capacitors , 1983 .