Influence of a ZnMnTe nucleation layer on the structural quality of (111) ZnTe grown by MOVPE on (100) GaAs

The improvement of a ZnTe surface layer quality is reported. For the first time a ZnTe layer of (111) orientation has been grown on (100) GaAs substrate. This orientation, which is responsible for high layer quality, was induced when adding Mn at the onset of the ZnTe growth. This leads to a ZnMnTe nucleation layer responsible for the high morphology quality of the layer.