One selector-one resistor (1S1R) crossbar array for high-density flexible memory applications

Lack of a suitable selection device to suppress sneak current has impeded the development of 4F2 crossbar memory array utilizing stable and scalable bipolar resistive-switching. We report a high-performance nonlinear bipolar selector realized by a simple Ni/TiO2/Ni MIM structure with a high current density of 105 A/cm2, and a Ni/TiO2/Ni/HfO2/Pt vertically stacked 1S1R cell capable of gigabit memory implementation. Furthermore, the demonstration of 1S1R array fabricated completely at room temperature on a plastic substrate highlights the promise of future extremely low-cost flexible nonvolatile memory.

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