Efficient TCAD methodology for ESD failure current prediction of smart power ESD protection
暂无分享,去创建一个
[1] Mark R. Pinto,et al. ULSI technology development by predictive simulations , 1993, Proceedings of IEEE International Electron Devices Meeting.
[2] H. Masuda,et al. TCAD strategy for predictive VLSI memory development , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.
[3] Nicolas Nolhier,et al. Design guidelines to achieve a very high ESD robustness in a self-biased NPN , 2002, 2002 Electrical Overstress/Electrostatic Discharge Symposium.
[4] G. Groos,et al. Experimental extraction of the electron impact-ionization coefficient at large operating temperatures , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
[5] A. Amerasekera,et al. Electrothermal behavior of deep submicron nMOS transistors under high current snapback (ESD/EOS) conditions , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.
[6] Kai Esmark. Device simulation of ESD protection elements , 2001 .