论文信息 - Power-Management Features of R-Mobile U2, an Integrated Application Processor and Baseband Processor

Power-Management Features of R-Mobile U2, an Integrated Application Processor and Baseband Processor

R-mobile U2 integrates an application processor and an LTE-capable triple-band baseband processor in 28-nm technology to provide rich content to the mid-range market. Several power-management techniques are equipped, including a low-leakage power switch, dual-standby mode static RAM (SRAM), and frequency control for maximum power suppression.

[1] H. Yamamoto,et al. A 45nm single-chip application-and-baseband processor using an intermittent operation technique , 2009, 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

[2] S. Yoshioka,et al. A 65 nm Single-Chip Application and Dual-Mode Baseband Processor With Partial Clock Activation and IP-MMU , 2009, IEEE Journal of Solid-State Circuits.

[3] T. Kataoka,et al. A 28nm High-κ metal-gate single-chip communications processor with 1.5GHz dual-core application processor and LTE/HSPA+-capable baseband processor , 2013, 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers.

[4] Koji Ohno,et al. A 65nm Single-Chip Application and Dual-Mode Baseband Processor with Partial Clock Activation and IP-MMU , 2008, 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

[5] Y. Yasu,et al. A 1.92 μs-wake-up time thick-gate-oxide power switch technique for ultra low-power single-chip mobile processors , 2007, 2007 IEEE Symposium on VLSI Circuits.

[6] J. Wang,et al. Cost effective 28nm LP SoC technology optimized with circuit/device/process co-design for smart mobile devices , 2010, 2010 International Electron Devices Meeting.

[7] Koji Nii,et al. A 0.41 µA Standby Leakage 32 kb Embedded SRAM with Low-Voltage Resume-Standby Utilizing All Digital Current Comparator in 28 nm HKMG CMOS , 2013, IEEE Journal of Solid-State Circuits.