Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
暂无分享,去创建一个
Wei Huang | Chih-Hsiang Yang | Shui-Yang Lien | Chung-Yuan Kung | S. Lien | F. Xiong | Xiao-Ying Zhang | Wei Huang | C. Kung | Chia-Hsun Hsu | Song-Yan Chen | Wen-Zhang Zhu | Fei-Bing Xiong | Xian-Guo Meng | W. Zhu | Chih-Hsiang Yang | Chia‐Hsun Hsu | Xiao‐Ying Zhang | Xian-Guo Meng | Song Chen | Shui‐Yang Lien
[1] Cheng Li,et al. An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices , 2016 .
[2] Vandana,et al. Silicon surface passivation using thin HfO2 films by atomic layer deposition , 2015 .
[3] S. Lien,et al. Investigation on the passivated Si/Al2O3 interface fabricated by non-vacuum spatial atomic layer deposition system , 2015, Nanoscale Research Letters.
[4] T. Mikolajick,et al. Symmetrical Al2O3-based passivation layers for p- and n-type silicon , 2014 .
[5] H. Hwang,et al. Advanced passivation techniques for Si solar cells with high-κ dielectric materials , 2014 .
[6] A. Albadri. Characterization of Al2O3 surface passivation of silicon solar cells , 2014 .
[7] Mohammad Ziaur Rahman,et al. Advances in surface passivation and emitter optimization techniques of c-Si solar cells , 2014 .
[8] J. Liao,et al. Reliability assessment of ultra-thin HfO2 films deposited on silicon wafer , 2012 .
[9] Vikram Singh,et al. Study of rapid thermal annealing on ultra thin high-k HfO2 films properties for nano scaled MOSFET technology , 2012 .
[10] M. Baroughi,et al. Passivation Properties of Atomic-Layer-Deposited Hafnium and Aluminum Oxides on Si Surfaces , 2012, IEEE Transactions on Electron Devices.
[11] A. Aberle,et al. Low-temperature Surface Passivation of Moderately Doped Crystalline Silicon by Atomic-layer-deposited Hafnium Oxide Films , 2012 .
[12] M. Toledano-Luque,et al. High-pressure reactively sputtered HfO2: Composition, morphology, and optical properties , 2007 .
[13] Ququan Wang,et al. Internal and external polarization memory loss in single semiconductor quantum dots , 2006 .
[14] Erqing Xie,et al. Interfacial chemical structure of HfO2∕Si film fabricated by sputtering , 2006 .
[15] Jun Jiang,et al. Study of HfSiO film prepared by electron beam evaporation for high-k gate dielectric applications , 2006 .
[16] Wmm Erwin Kessels,et al. Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3 , 2006 .
[17] D. Schroder. Semiconductor Material and Device Characterization, 3rd Edition , 2005 .
[18] John Robertson,et al. Defect energy levels in HfO2 high-dielectric-constant gate oxide , 2005 .
[19] Dieter K. Schroder,et al. Semiconductor Material and Device Characterization: Schroder/Semiconductor Material and Device Characterization, Third Edition , 2005 .
[20] M. White,et al. Initial growth of interfacial oxide during deposition of HfO2 on silicon , 2004 .
[21] S. Zou,et al. Study of HfO2 thin films prepared by electron beam evaporation , 2004 .
[22] D. Schroder. Semiconductor Material and Device Characterization , 1990 .
[23] W. A. Hill,et al. A single-frequency approximation for interface-state density determination , 1980 .