论文信息 - Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping - 字舞流文

Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping

S. Koester | J. Ott | D. Canaperi | C. Jahnes | J. Chu | J. Tornello | K. Saenger | Q. Ouyang