Diffusion barriers in thin films

[1]  M.-A. Nicolet,et al.  Reaction of thin metal films with SiO2 substrates , 1978 .

[2]  R. S. Nowicki,et al.  Improvement of the diffusion barrier properties of rf‐sputtered molybdenum , 1978 .

[3]  A. Christou,et al.  Interdiffusion and Schottky‐barrier‐height variations in Au–W(Ti)/n‐GaAs contacts , 1977 .

[4]  M. Nicolet,et al.  Investigation of the Au–Ge–Ni and Au–Ge–Pt system used for alloyed contacts to GaAs , 1977 .

[5]  S. U. Campisano,et al.  Grain boundary diffusion and recrystallization in Cu-Pb thin films , 1977 .

[6]  M. Nicolet,et al.  Chromium thin film as a barrier to the interaction of Pd2Si with Al , 1977 .

[7]  T. Honda,et al.  GaAs planar gunn devices with sulfur-ion implanted n layers , 1977 .

[8]  J. Poate,et al.  Interdiffusion mechanisms in Ag‐Au thin‐film couples , 1976 .

[9]  M. Nicolet,et al.  Influence of the nature of the Si substrate on nickel silicide formed from thin Ni films , 1976 .

[10]  Rodger M. Walser,et al.  First phase nucleation in silicon–transition‐metal planar interfaces , 1976 .

[11]  K. Nakamura,et al.  Ti and V layers retard interaction between Al films and polycrystalline Si , 1976 .

[12]  F. Käppeler,et al.  Ion beam surface layer analysis , 1976 .

[13]  M.-A. Nicolet,et al.  Studies of the Ti‐W Metallization System on Si , 1976 .

[14]  D. Gupta.  Grain-boundary energies and their interaction with Ta solute from self-diffusion in Au and Au-1·2 at. % Ta alloy , 1976 .

[15]  James W. Mayer,et al.  Effect of Oxidizing Ambients on Platinum Silicide Formation II . Auger and Backscattering Analyses , 1975 .

[16]  P. A. Turner,et al.  Thin‐film interdiffusion. I. Au‐Pd, Pd‐Au, Ti‐Pd, Ti‐Au, Ti‐Pd‐Au, and Ti‐Au‐Pd , 1975 .

[17]  J. Poate,et al.  Thin‐film interdiffusion. II. Ti‐Rh, Ti‐Pt, Ti‐Rh‐Au, and Ti‐Au‐Rh , 1975 .

[18]  K. Tu.  Selective growth of metal‐rich silicide of near‐noble metals , 1975 .

[19]  King-Ning Tu,et al.  Thin‐film reactions of Pb with AgAu and AgPd alloys , 1975 .

[20]  K. Nakashima,et al.  Low temperature diffusion of Au into Si in the Si(substrate)-Au(film) system☆ , 1975 .

[21]  Studies on the Al2O3−Ti−Mo−Au metallization system , 1975 .

[22]  King-Ning Tu,et al.  Surface reactions on MOS structures , 1974 .

[23]  K. Hieber.  Structural and electrical properties of Ta and Ta nitrides deposited by chemical vapour deposition , 1974 .

[24]  J. W. Mayer,et al.  Kinetics of silicide formation by thin films of V on Si and SiO2 substrates , 1974 .

[25]  I. V. Mitchell,et al.  Effects of deposition parameters on properties of rf sputtered molybdenum films , 1974 .

[26]  J. Ziegler,et al.  Thermal stability of a proposed magnetic bubble metallurgy , 1974 .

[27]  K. Tu,et al.  Analysis of thin-film structures with nuclear backscattering and x-ray diffraction , 1974 .

[28]  W. F. V. D. Weg,et al.  Characterization of polycrystalline layers by channelling measurements , 1973 .

[29]  R. E. Scott,et al.  Formation kinetics and structure of Pd2Si films on Si , 1973 .

[30]  Robert W. Bower,et al.  Characteristics of aluminum‐titanium electrical contacts on silicon , 1973 .

[31]  R. Rosenberg,et al.  Mass transport in layered polycrystalline thin films , 1972 .

[32]  J. Mayer,et al.  Formation of silicon oxide over gold layers on silicon substrates , 1972 .

[33]  S. Nagata,et al.  Structure of Film Prepared by Low Energy Sputtering of Molybdenum , 1971 .

[34]  R. W. Berry,et al.  Thin Film Technology , 1970 .

[35]  J. E. Hilliard,et al.  Effect of Gradient Energy on Diffusion in Gold‐Silver Alloys , 1969 .

[36]  K. L. Chopra,et al.  Thin Film Phenomena , 1969 .

[37]  R. Tauber,et al.  Preparation, Structure, and Properties of Sputtered, Highly Nitrided Tantalum Films , 1968 .

[38]  R. Hake.  UPPER‐CRITICAL‐FIELD LIMITS FOR BULK TYPE‐II SUPERCONDUCTORS , 1967 .

[39]  P. Hall,et al.  Superconducting Thin Films of Niobium, Tantalum, Tantalum Nitride, Tantalum Carbide, and Niobium Nitride , 1964 .

[40]  D. Gerstenberg,et al.  Effects of Nitrogen, Methane, and Oxygen on Structure and Electrical Properties of Thin Tantalum Films , 1964 .

[41]  Paul Shewmon,et al.  Diffusion in Solids , 2016 .

[42]  Robert Stratton,et al.  Volt-current characteristics for tunneling through insulating films , 1962 .

[43]  M. Hansen,et al.  Constitution of Binary Alloys , 1958 .

[44]  J. DuMond,et al.  An X-Ray Method of Determining Rates of Diffusion in the Solid State , 1940 .