Characteristics of a field plate connected to T-shaped gate in AlGaN/GaN HEMTs
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Eun Soo Nam | Dong Min Kang | Hyung Sup Yoon | Jong-Min Lee | Kyu Jun Cho | Sungil Kim | Kyung Ho Lee | Yong Hwan Kwon | Ho Kyun Ahn | Byoung Gue Min | Sang Heung Lee | Dong Yung Kim | Hae Cheon Kim | Chul Won Ju | Jong Won Lim
[1] Claudio Lanzieri,et al. Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs , 2013, Microelectron. Reliab..
[2] J. Li,et al. High breakdown voltage GaN HFET with field plate , 2001 .
[3] Influence of Field Plates and Surface Traps on Microwave Silicon Carbide MESFETs , 2008, IEEE Transactions on Electron Devices.
[4] U. Mishra,et al. 30-W/mm GaN HEMTs by field plate optimization , 2004, IEEE Electron Device Letters.
[5] Peter Kordos,et al. Effect of surface passivation on performance of AlGaN/GaN/Si HEMTs , 2003 .
[6] Ilesanmi Adesida,et al. A comparative study of surface passivation on AlGaN/GaN HEMTs , 2002 .
[7] U. Mishra,et al. AlGaN/GaN HEMTs-an overview of device operation and applications , 2002, Proc. IEEE.
[8] M. Han,et al. Design of AlGaN/GaN HEMTs employing mesa field plate for breakdown voltage enhancement , 2010 .
[9] Wataru Saito,et al. Field-Plate Structure Dependence of Current Collapse Phenomena in High-Voltage GaN-HEMTs , 2010, IEEE Electron Device Letters.
[10] Shreepad Karmalkar,et al. Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate , 2001 .