Improved Performance of Fully-Recessed High-Threshold-Voltage GaN MIS-HEMT With in Situ H₂/N₂ Plasma Pretreatment

In this letter, we demonstrate a high-threshold-voltage and high-current-density normally-off SiN/AlN/ GaN-on-Si MIS-HEMT with <italic>in situ</italic> low-damage H<sub>2</sub>/N<sub>2</sub> plasma pretreatment. The <italic>in situ</italic> plasma pretreatment was performed in a plasma enhanced atomic layer deposition (PEALD) system prior to the PEALD-AlN deposition, which effectively suppress the interface trap densities between the AlN/GaN interface and increase the mobility of electrons to 198.80 cm<inline-formula> <tex-math notation="LaTeX">$^{{2}}/\text {V} \cdot \text {s}$ </tex-math></inline-formula>. Therefore, the devices demonstrate state-of-art characteristics with a competitive maximum drain current of 683.75 mA/mm at <inline-formula> <tex-math notation="LaTeX">${V} _{\textit {GS}} =15\text{V}$ </tex-math></inline-formula> and a high threshold of 6.28 V. The devices also show ON/OFF current ratio of <inline-formula> <tex-math notation="LaTeX">$10^{{8}}$ </tex-math></inline-formula> and off-state breakdown voltage of 1778 V.

[1]  Huolin Huang,et al.  Improving Gate Reliability of 6-In E-Mode GaN-Based MIS-HEMTs by Employing Mixed Oxygen and Fluorine Plasma Treatment , 2022, IEEE Transactions on Electron Devices.

[2]  K. Lau,et al.  1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current , 2021, IEEE Transactions on Electron Devices.

[3]  Zheyang Zheng,et al.  p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability , 2020 .

[4]  M. Shrivastava,et al.  Novel Drain-Connected Field Plate GaN HEMT Designs for Improved VBD–RON Tradeoff and RF PA Performance , 2020, IEEE Transactions on Electron Devices.

[5]  Mengjun Li,et al.  Improved performance of fully-recessed normally-off LPCVD SiN/GaN MISFET using N2O plasma pretreatment , 2019, Solid-State Electronics.

[6]  K. Lau,et al.  High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown , 2019, IEEE Electron Device Letters.

[7]  Yandong He,et al.  823-mA/mm Drain Current Density and 945-MW/cm2 Baliga’s Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric , 2018, IEEE Electron Device Letters.

[8]  Yandong He,et al.  Normally-off fully recess-gated GaN metal–insulator–semiconductor field-effect transistor using Al2O3/Si3N4 bilayer as gate dielectrics , 2017 .

[9]  Gaudenzio Meneghesso,et al.  Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate , 2017 .

[10]  Bo Zhang,et al.  7.6 V Threshold Voltage High-Performance Normally-Off Al2O3/GaN MOSFET Achieved by Interface Charge Engineering , 2016, IEEE Electron Device Letters.

[11]  Jin Wei,et al.  Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess , 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

[12]  Wei Huang,et al.  Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation , 2015, IEEE Electron Device Letters.

[13]  黄森.  High-Performance Enhancement-Mode Al？O？/AlGaN/GaN-on-Si MISFETs With 626 MW/cm2 Figure of Merit , 2015 .

[14]  Yung C. Liang,et al.  6.5 V High Threshold Voltage AlGaN/GaN Power Metal-Insulator-Semiconductor High Electron Mobility Transistor Using Multilayer Fluorinated Gate Stack , 2015, IEEE Electron Device Letters.

[15]  Kevin J. Chen,et al.  Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier , 2015, IEEE Electron Device Letters.

[16]  Y. Hao,et al.  High-temperature low-damage gate recess technique and ozone-assisted ALD-grown Al2O3 gate dielectric for high-performance normally-off GaN MIS-HEMTs , 2014, 2014 IEEE International Electron Devices Meeting.

[17]  Xiaohua Ma,et al.  Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask , 2014, IEEE Electron Device Letters.

[18]  Jian Jang Huang,et al.  Enhancement-Mode GaN-Based High-Electron Mobility Transistors on the Si Substrate With a P-Type GaN Cap Layer , 2014, IEEE Transactions on Electron Devices.

[19]  Shu Yang,et al.  600-V Normally Off ${\rm SiN}_{x}$ /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse , 2013, IEEE Electron Device Letters.

[20]  Jung-Hee Lee,et al.  Performance of Fully Recessed AlGaN/GaN MOSFET Prepared on GaN Buffer Layer Grown With AlSiC Precoverage on Silicon Substrate , 2013, IEEE Electron Device Letters.

[21]  Xiaohua Ma,et al.  Fabrication of Normally Off AlGaN/GaN MOSFET Using a Self-Terminating Gate Recess Etching Technique , 2013, IEEE Electron Device Letters.

[22]  Kinam Kim,et al.  1.6kV, 2.9 mΩ cm2 normally-off p-GaN HEMT device , 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.

[23]  Gustaaf Borghs,et al.  Influence of thermal anneal steps on the current collapse of fluorine treated enhancement mode SiN/AlGaN/GaN HEMTs , 2009 .

[24]  T. Oka,et al.  AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications , 2008, IEEE Electron Device Letters.

[25]  H. Ishida,et al.  Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation , 2007, IEEE Transactions on Electron Devices.

[26]  Ho-Young Cha,et al.  The Effect of an Fe-doped GaN Buffer on off-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate , 2006, IEEE Transactions on Electron Devices.

[27]  I. Omura,et al.  Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications , 2006, IEEE Transactions on Electron Devices.

[28]  Yugang Zhou,et al.  High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment , 2005, IEEE Electron Device Letters.

[29]  D. Schroder.  Semiconductor Material and Device Characterization , 1990 .

[30]  Minghua Zhu,et al.  P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors , 2020 .

[31]  Hee-Sung Kang,et al.  Effects of TMAH Treatment on Device Performance of Normally Off Al 2 O 3 /GaN MOSFET , 2011 .