fmax of 490 GHz metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate
暂无分享,去创建一个
Y. Cordier | A. Cappy | H. Happy | S. Bollaert | T. Parenty | S. Lépilliet | M. Zaknoune
[1] T. Mimura,et al. Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency , 2001, IEEE Electron Device Letters.
[2] Henri Happy,et al. The indium content in metamorphic As/As HEMTs on GaAs substrate: a new structure parameter , 2000 .
[3] Y. Cordier,et al. MBE grown InAlAs/InGaAs lattice mismatched layers for HEMT application on GaAs substrate , 1998 .