SiGe HBT Performance Improvements from Lateral Scaling

Measurements on SiGe HEr devices with electrical emitter widths down to O.18;nn have been compared and used to verifY components in a simple structural parasitic model. We argue that despite the dominance of extrinsic capacitance and resistance components, significant improvements in power dissipation, gain, and base resistance are to be expected in succeeding generations of HEr technologies. fMAX improvements from lateral scaling are demonstrated.