Rapid Thermal Processing For Sub-Half-Micron CMOS IC Manufacturing

Semiconductor Process and Design Center, Texas Instruments P.O. Box 655012, Dallas, Texas, 75265 Abstmct A group of rapid thermal processes have been developed for all the thermal fabrication steps required in two subhalf-micron RTCVD of fin sten: RTCVD-W is performed at 25 T~~~ CMOS tecbnologies These RTPs cover a processing temperature range of 45~0-11000& Im roved RTP control has been established for a double-level met: system. The first metal layer is deposited throughout the integratecf CMOS flows using a customised backdirectly over a TIN layer. The second metal layer employs a layside seal stiructure on epitaxial wafers. Complete subhalf-micron ered structure including an underlayer of RTCVD-W. A depoCMOS procJess integration and device manufacturing have been sucgo% results in void-free filling of the cessfully demonstrated with all-RTP thermal processing. doped junctions are obtained.