论文信息 - Time resolved x‐ray diffraction study of laser annealing in silicon at grazing incidence

Time resolved x‐ray diffraction study of laser annealing in silicon at grazing incidence

The loss of crystallinity at the surface of a silicon single crystal exposed to intense pulsed laser irradiation has been observed by means of a grazing incidence diffraction technique. The Bragg peak is shown to disappear during melting, and gradually reappear during subsequent stages of recrystallization.

[1] Richart E. Slusher,et al. Time‐resolved reflectivity of ion‐implanted silicon during laser annealing , 1978 .

[2] G. C. Jain,et al. Grain growth in polycrystalline silicon , 1978 .

[3] R. Colella. Multiple Diffraction of X-Rays , 1982 .

[4] D. Mills,et al. Nanosecond resolved X-ray diffraction during pulsed laser annealing of silicon , 1983 .

[5] D. M. Mills,et al. Time‐resolved x‐ray diffraction measurement of the temperature and temperature gradients in silicon during pulsed laser annealing , 1983 .

[6] R. Becker,et al. Low-Energy Electron Diffraction during Pulsed Laser Annealing: A Time- Resolved Surface Structural Study , 1984 .