论文信息 - Ellipsometric measurements of molecular‐beam‐epitaxy‐grown semiconductor multilayer thicknesses: A comparative study

Ellipsometric measurements of molecular‐beam‐epitaxy‐grown semiconductor multilayer thicknesses: A comparative study

Variable angle of incidence spectroscopic ellipsometry, cross‐sectional transmission electron microscopy, and Rutherford backscattering are used to measure heterojunction layer thicknesses in the same AlGaAs/GaAs sample. All three techniques yield the same thickness values within error limits. Two additional samples were implanted with 750‐keV Ga ions to fluences of 5×1015 and 1016 cm−2, respectively, and results of diagnostics measurements by the three techniques compared. The three techniques are found to complement each other in providing useful information.

[1] C. B. Carter,et al. Defect structure and intermixing of ion-implanted AlxGa1−xAs/GaAs superlattices , 1986 .

[2] D. Aspnes,et al. A NEW RESONANT ELLIPSOMETRIC TECHNIQUE FOR CHARACTERIZING THE INTERFACE BETWEEN GaAs AND ITS PLASMA-GROWN OXIDE. , 1978 .

[3] P. G. Snyder,et al. Variable Angle of Incidence Spectroscopic Ellipsometric Measurement of the Franz-Keloysh Effect in Modfet Structures , 1986 .

[4] A. A. Studna,et al. Geometrically exact ellipsometer alignment. , 1971, Applied optics.

[5] D. Aspnes. Studies of surface, thin film and interface properties by automatic spectroscopic ellipsometry , 1981 .

[6] T. Mayer,et al. Optical Model for the Ellipsometric Characterization of Low Energy Ion Beam Damage in Single‐Crystal Silicon , 1986 .

[7] Jagdish Narayan,et al. Nondestructive depth profiling by spectroscopic ellipsometry , 1985 .

[8] N. Bashara,et al. Variable wavelength, variable angle ellipsometry including a sensitivities correlation test , 1986 .

[9] Rajaram Bhat,et al. Optical properties of AlxGa1−x As , 1986 .

[10] J. Biersack,et al. A Monte Carlo computer program for the transport of energetic ions in amorphous targets , 1980 .

[11] N. Bashara,et al. Sensitivity of the Ellipsometric Parameters to Angle-of-Incidence Variations. , 1974, Applied optics.

[12] John A. Woollam,et al. Variable angle of incidence spectroscopic ellipsometry: Application to GaAs‐AlxGa1−xAs multiple heterostructures , 1986 .