Temperature dependence of threshold current for coupled multiple quantum‐well In1−xGax P1−zAsz‐InP heterostructure laser diodes

Data are presented showing that the threshold current density, Jth (T)∝exp(T/T0), of multiple quantum‐well InGaPAs‐InP heterostructure laser diodes, grown by LPE, exhibits a two‐regime behavior similar to that of conventional InGaPAs‐InP double‐heterojunction lasers. At temperatures below a break‐point temperature characteristic of the quaternary alloy, Jth (T) of these multiple quantum‐well laser diodes is less temperature dependent (i.e., larger T0, as high as 150 °C) than that of regular quaternary DH lasers. At temperatures above the break‐point temperature, Jth (T) is dominated by a poorly understood competing temperature‐dependent nonradiative recombination process. In this range the T0 of these multiple quantum‐well diodes is similar to that of ordinary InGaPAs‐InP DH diodes but, because of the large number of layers and large lower‐temperature T0, is not apt to be caused by defects at heterointerfaces.

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