Space-saving edge-termination structures for vertical charge compensation devices

High efficiency is one of the major requirements of today's modern power architectures. To achieve the needs of modern power topologies, advanced power device designs are essential. In the field of low-voltage devices, covering a range up to 250 V, a significant reduction of the MOSFET on-resistance is achieved by employing the compensation principle based on field-plates. Such devices do require new design techniques. Advanced edge-termination structures enable high blocking voltages exceeding 100 V. This work proposes different edge-termination structures and shows first results and benchmarks of manufactured devices from this new MOSFET design generation.

[1]  J. Tihanyi,et al.  A new generation of high voltage MOSFETs breaks the limit line of silicon , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

[2]  R. Siemieniec,et al.  A New Fast and Rugged 100 V Power MOSFET , 2006, 2006 12th International Power Electronics and Motion Control Conference.

[3]  I. Pawel,et al.  Design of avalanche capability of Power MOSFETs by device simulation , 2007, 2007 European Conference on Power Electronics and Applications.