论文信息 - Monitoring of TiSi/sub 2/ formation on narrow polycrystalline silicon lines using Raman spectroscopy

Monitoring of TiSi/sub 2/ formation on narrow polycrystalline silicon lines using Raman spectroscopy

Micro-Raman spectroscopy is used to monitor titanium silicide (TiSi/sub 2/) formation on narrow undoped polycrystalline silicon lines. Linewidths varying from 1.0 /spl mu/m down to 0.35 /spl mu/m, with silicidation by rapid thermal anneal (RTA) temperature ranging between 780/spl deg/C and 1020/spl deg/C were analyzed. Phase changes between C49 and C54-TiSi/sub 2/ phases were clearly observed. Results demonstrate that analysis of the C54-TiSi/sub 2/ Raman peak intensity allowed fast and nondestructive estimation of the process window for low resistivity C54-TiSi/sub 2/ formation. Comparison with sheet resistivity measurements showed that micro-Raman scattering provides a complimentary means to electrical analysis for the study of TiSi/sub 2/ formation.

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