Defectivity control of aluminum chemical mechanical planarization in replacement metal gate process of MOSFET

The replacement metal gate (RMG) defectivity performance control is very challenging in high-k metal gate (HKMG) chemical mechanical polishing (CMP). In this study, three major defect types, including fall-on particles, micro-scratch and corrosion have been investigated. The research studied the effects of polishing pad, pressure, rotating speed, flow rate and post-CMP cleaning on the three kinds of defect, which finally eliminated the defects and achieved good surface morphology. This study will provide an important reference value for the future research of aluminum metal gate CMP.

[1]  Hong Lin,et al.  Particle adhesion and removal mechanisms in post-CMP cleaning processes , 2002, ASMC 2002.

[2]  Guodong Chen,et al.  Evaluation of planarization performance for a novel alkaline copper slurry under a low abrasive concentration , 2014 .

[3]  V. Misra,et al.  Issues in High-ĸ Gate Stack Interfaces , 2002 .

[4]  Liu Yuling,et al.  Evaluation of planarization capability of copper slurry in the CMP process , 2013 .

[5]  G. Dewey,et al.  Application of high-κ gate dielectrics and metal gate electrodes to enable silicon and non-silicon logic nanotechnology , 2005 .

[6]  C. Auth,et al.  45nm High-k + metal gate strain-enhanced transistors , 2008, 2008 Symposium on VLSI Technology.

[7]  J. Y. Wu,et al.  Defect reduction of replacement metal gate aluminum chemical mechanical planarization at 28nm technology node , 2013 .

[8]  Fei Yang,et al.  A chemical mechanical planarization model for aluminum gate structures , 2015 .

[9]  Alvin Leng Sun Loke,et al.  Electromigration of submicron Damascene copper interconnects , 1998, 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).

[10]  R. Chau,et al.  A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging , 2007, 2007 IEEE International Electron Devices Meeting.

[11]  Arun K. Sikder,et al.  Chemical mechanical planarization for microelectronics applications , 2004 .

[12]  Jun Yong Kim,et al.  Corrosion in Aluminum Chemical Mechanical Planarization for Sub-Quarter-Micron Dynamic Random Access Memory Devices , 2002 .

[13]  K. Mistry,et al.  The High-k Solution , 2007, IEEE Spectrum.

[14]  M. Ronay,et al.  Development of Aluminum Chemical Mechanical Planarization , 2001 .

[15]  Hyunseop Lee,et al.  Mechanical effect of colloidal silica in copper chemical mechanical planarization , 2009 .

[16]  Zhang Yufeng,et al.  Investigation on surface roughness in chemical mechanical polishing of TiO 2 thin film , 2014 .

[17]  W. Tseng,et al.  Microstructure-related resistivity change after chemical–mechanical polish of Al and W thin films , 2000 .