Si image sensors with wide spectral response and high robustness to ultraviolet light exposure

[1]  Yu. A. Goldberg.  Semiconductor near-ultraviolet photoelectronics , 1999 .

[2]  E. Genin,et al.  Application of liquid chromatography with mass spectrometry combined with photodiode array detection and tandem mass spectrometry for monitoring pesticides in surface waters. , 2000, Journal of chromatography. A.

[3]  Rihito Kuroda,et al.  Photodiode dopant structure with atomically flat Si surface for high-sensitivity and stability to UV light , 2012, Electronic Imaging.

[4]  Michael W. Blades,et al.  Application of pattern recognition and factor analysis to inductively coupled plasma optical emission spectra , 1986 .

[5]  T. Ohmi,et al.  Dependence of thin-oxide films quality on surface microroughness , 1992 .

[6]  Guy Meynants,et al.  A high-dynamic range (HDR) back-side illuminated (BSI) CMOS image sensor for extreme UV detection , 2012, Electronic Imaging.

[7]  Tadahiro Ohmi,et al.  Complementary Metal–Oxide–Silicon Field-Effect-Transistors Featuring Atomically Flat Gate Insulator Film/Silicon Interface , 2009 .

[8]  Y. Gaillard,et al.  Screening and identification of drugs in human hair by high-performance liquid chromatography-photodiode-array UV detection and gas chromatography-mass spectrometry after solid-phase extraction. A powerful tool in forensic medicine. , 1997, Journal of chromatography. A.

[9]  Y. Hiraoka,et al.  Multiple-color fluorescence imaging of chromosomes and microtubules in living cells. , 1999, Cell structure and function.

[10]  R. Kuroda,et al.  Atomically Flat Silicon Surface and Silicon/Insulator Interface Formation Technologies for (100) Surface Orientation Large-Diameter Wafers Introducing High Performance and Low-Noise Metal–Insulator–Silicon FETs , 2009, IEEE Transactions on Electron Devices.

[11]  Joris Van Loco,et al.  Development of a fast analytical method for the determination of sudan dyes in chili- and curry-containing foodstuffs by high-performance liquid chromatography-photodiode array detection. , 2006, Journal of agricultural and food chemistry.

[12]  A. Nathan,et al.  Degradation behavior and damage mechanisms of CCD image sensor with deep-UV laser radiation , 2004, IEEE Transactions on Electron Devices.

[13]  Rihito Kuroda,et al.  A wide dynamic range CMOS image sensor with 200–1100 nm spectral sensitivity and high robustness to UV right exposure , 2014 .

[14]  S. Sugawa,et al.  A 100 dB dynamic range CMOS image sensor using a lateral overflow integration capacitor , 2005, ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005..

[15]  Rihito Kuroda,et al.  A UV Si-photodiode with almost 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack , 2013, Electronic Imaging.

[16]  B Grambow,et al.  Complexation studies of Eu(III) with alumina-bound polymaleic acid: effect of organic polymer loading and metal ion concentration. , 2002, Environmental science & technology.

[17]  Rihito Kuroda,et al.  [Paper] A Highly Ultraviolet Light Sensitive and Highly Robust Image Sensor Technology Based on Flattened Si Surface , 2014 .

[18]  Rihito Kuroda,et al.  A 1024×1 linear photodiode array sensor with fast readout speed flexible pixel-level integration time and high stability to UV light exposure , 2014, Electronic Imaging.

[19]  Shigetoshi Sugawa,et al.  A sensitivity and linearity improvement of a 100-dB dynamic range CMOS image sensor using a lateral overflow integration capacitor , 2006, IEEE Journal of Solid-State Circuits.

[20]  S. Bean,et al.  Development of a quantitative high-performance liquid chromatography-photodiode array detection measurement system for phenolic acids. , 2004, Journal of chromatography. A.

[21]  H. Yamada,et al.  A UV sensor IC based on SOI technology for UV care application , 2008, 2008 SICE Annual Conference.

[22]  Tadahiro Ohmi,et al.  Atomically Flattening Technology at 850ºC for Si(100) Surface , 2019, ECS Transactions.