论文信息 - Deep submicron AlGaN/GaN HEMTs with ion implanted source/drain regions and non-alloyed ohmic contacts

Deep submicron AlGaN/GaN HEMTs with ion implanted source/drain regions and non-alloyed ohmic contacts

Silicon ions were implanted to source-drain regions to achieve a non-alloyed ohmic contact resistance as low as 0.2 Ω · mm. Based on this technology, T-shaped deep submicron HEMTs were fabricated. An extrinsic fT of 92 GHz and an extrinsic fmax of 148 GHz have been measured in a passivated 0.15×150 µm device. Power measurements at 10 GHZ showed 70.7% power-added-efficiency and 4.1 W/mm power density at 20 V drain bias.

[1] S. Denbaars,et al. Study of the n+ GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance , 2007 .

[2] A. Kurdoghlian,et al. GaN HFET for W-band Power Applications , 2006, 2006 International Electron Devices Meeting.

[3] M. Higashiwaki,et al. AlGaN/GaN MIS-HFETs with f/sub T/ of 163 GHz using cat-CVD SiN gate-insulating and passivation Layers , 2006, IEEE Electron Device Letters.

[4] S. Keller,et al. High-power AlGaN/GaN HEMTs for Ka-band applications , 2005, IEEE Electron Device Letters.

[5] U. Mishra,et al. Ion implanted AlGaN-GaN HEMTs with nonalloyed Ohmic contacts , 2005, IEEE Electron Device Letters.

[6] U. Mishra,et al. 30-W/mm GaN HEMTs by field plate optimization , 2004, IEEE Electron Device Letters.