Investigation on Preparation of the Target for Metal Film Resistor with High Resistance

The target for metal film resistor is one of the important factors influencing the quality of metal film and the properties of resistor.The grainrefinement is the key to manufacture tight target.Grainrefining is not only in favor of underlying tissues uniformization of Cr-Si target,but also lowers transition temperature between toughness and brittleness,and makes the target manufactured with high intensity and hardness,good plasticity,which will help to improve the rate of finished targets.In the paper the reason is analyzed on grainrefinement improving combination property of target,and the grainrefining measures taken in the experiment,such as grainrefiner Ti added,electromagnetic stirring and so on,are introduced.Experiment shows mental film resistors with resistance 1 MΩ,sputtered on RJ24 production line,have better combination property,and the temperature coefficient of resistance(TCR) is less than 20×10-6/℃.