GaN electroluminescent devices: Preparation and studies

[1]  D. Bois,et al.  Cathodoluminescence measurements of the minority‐carrier lifetime in semiconductors , 1977 .

[2]  D. Bois,et al.  Efficient injection mechanism for electroluminescence in GaN , 1977 .

[3]  A. Shintani,et al.  Electric properties of GaN light‐emitting diodes , 1977 .

[4]  A. Shintani,et al.  Optical Properties of GaN Light Emitting Diodes , 1976 .

[5]  A. Shintani,et al.  Light Emitting Patterns of Gallium Nitride Electroluminescence , 1976 .

[6]  R. Madar,et al.  Optimized growth conditions and properties of N-type and insulating GaN , 1976 .

[7]  R. Madar,et al.  High pressure solution growth of GaN , 1975 .

[8]  Jacques I. Pankove,et al.  Blue Anti-Stokes Electroluminescence in GaN , 1975 .

[9]  T. Matsumoto,et al.  Effects of Built-In Strain on Luminescence and Absorption Spectra of GaN Epitaxial Crystals , 1974 .

[10]  Jacques I. Pankove,et al.  Properties of Zn‐doped GaN. II. Photoconductivity , 1974 .

[11]  J. Pankove,et al.  Model for Electroluminescence in GaN , 1974 .

[12]  Bo Monemar,et al.  Luminescence in epitaxial GaN : Cd , 1974 .

[13]  J. Pankove,et al.  Properties of Zn‐doped GaN. I. Photoluminescence , 1974 .

[14]  Y. Morimoto,et al.  Anomalous Behaviour in GaN-Zn Junctions , 1974 .

[15]  T. Matsumoto,et al.  Pair Luminescence from Zn-Doped GaN , 1974 .

[16]  Marc Ilegems,et al.  Luminescence of Be‐ and Mg‐doped GaN , 1973 .

[17]  Marc Ilegems,et al.  Electrical properties of n-type vapor-grown gallium nitride , 1973 .

[18]  R. Hill.  Transport phenomena in thin films , 1972 .

[19]  R. Dingle,et al.  Luminescence of Zn‐ and Cd‐doped GaN , 1972 .

[20]  J. J. Tietjen,et al.  THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN , 1969 .

[21]  J. Pankove.  Optical properties of GaN , 1975 .

[22]  Robert M. Hill,et al.  Poole-Frenkel conduction in amorphous solids , 1971 .