10Gbit/s Operation ofIntegrated BRSLaser-MISFET on IndiumPhosphide

Anintegrated 1.3pmoptoelectronic transmitter combining aBRSlaser with anInPMIS field effect transistor hasbeenmade.Epitaxy ofthelaser structure inagroove wascompatible withsubsequent InPFETionimplantations andannealing. With10mA laser threshold current and80mS/mmFETsof2x 250pmgatewidth, themodule features a transfer efficiency of 12mW/V, asmall-signal bandwidth of7GHzandanNRZdata rateof10Gbit/s.