2004 IEEE International Conference on Integrated Circuit Design and Technology

Device architectures incorporating multiple gate structures have been proposed to allow transistor scaling beyond the planar MOSFET integrations. These device architectures can improve performance such as better short channel performance and reduced leakage. In addition the additional channel surface and gate electrodes offers new circuit possibilities such as dynamic threshold voltage control and an RF mixer are demonstrated. it is desirable to fabricate muiti-gated devices with the single gate on multiple sides and multiple gate electrodes this has been demonstrated successfully. lNruOOUCnON