论文信息 - A 0.1 /spl mu/m CMOS with a step channel profile formed by ultra high vacuum CVD and in-situ doped ions

A 0.1 /spl mu/m CMOS with a step channel profile formed by ultra high vacuum CVD and in-situ doped ions

In this paper, a novel O.1 /spl mu/m CMOS device with a step channel profile is proposed in order to attain low gate depletion layer capacitance and high punchthrough immunity. The step channel profile of boron for n-MOSFET, phosphorus for p-MOSFET was formed, utilizing ultra high vacuum (UHV) CVD and in-situ doped ions.<<ETX>>

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