Deep levels in indium selenide single crystals doped with iodine

Electron trapping levels in indium selenide single crystals doped with iodine have been investigated by deep‐level‐transient spectroscopy measurements. Two traps located at about 0.60 and 0.21 eV have been detected below the conduction band and the corresponding thermal capture cross sections have been evaluated. The first trap is present both in undoped and doped InSe crystals, whereas the second trap appears in doped samples.

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