0.2-$\mu{\rm m}$ AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition ${\rm Al}_{2}{\rm O}_{3}$ Passivation
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Wenhua H. Zhu | K. Nichols | P. Ye | P. Chao | Min Xu | Dong Xu | L. Pleasant | K. Chu | R. Roy | J. Diaz
暂无分享,去创建一个
Wenhua H. Zhu | K. Nichols | P. Ye | P. Chao | Min Xu | Dong Xu | L. Pleasant | K. Chu | R. Roy | J. Diaz