Detection and depth analyses of deep levels generated by ion implantation in n- and p-type 4H-SiC

The authors investigated deep levels in the whole energy range of bandgap of 4H-SiC, which are generated by low-dose N+, P+, and Al+ implantation, by deep level transient spectroscopy (DLTS). Ne+-implanted samples have been also prepared to investigate the pure implantation damage. In the n-type as-grown material, the Z1∕2 (EC−0.63eV) and EH6∕7 (EC−1.6eV) centers are dominant deep levels. At least, seven peaks (IN1, IN3–IN6, IN8, and IN9) have emerged by implantation and annealing at 1000°C in the DLTS spectra from all n-type samples, irrespective of the implanted species. After high-temperature annealing at 1700°C, however, most DLTS peaks disappeared, and two peaks, IN3 and IN9, which may be assigned to Z1∕2 and EH6∕7, respectively, survive with a high concentration over the implanted atom concentration. In the p-type as-grown material, the D (EV+0.40eV) and HK4 (EV+1.4eV) centers are dominant. Two peaks (IP1 and IP3) have emerged by implantation and annealing at 1000°C, and four traps IP2 (EV+0.39eV), ...

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