Investigations of recombination mechanisms in the pulsed far infra red photoresponse of n-InP
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[1] S. Yamada,et al. Electron mobility and compensation ratios in high‐purity n‐type InP , 1987 .
[2] Reeder,et al. Impact excitation and bottleneck effects in the time-resolved far-infrared photoresponse of high-purity InP. , 1987, Physical review. B, Condensed matter.
[3] T. Pramanik,et al. Cross-section for impact ionisation in semiconductors , 1986 .
[4] Bimberg,et al. Kinetics of relaxation and recombination of nonequilibrium carriers in GaAs: Carrier capture by impurities. , 1985, Physical review. B, Condensed matter.
[5] D. Anderson,et al. The growth of ultra-pure InP by vapour phase epitaxy , 1983 .
[6] G. Dodel,et al. Subnanosecond optical switching of far infrared radiation , 1983, 1983 Eighth International Conference on Infrared and Millimeter Waves.
[7] P. Landsberg,et al. Impact ionisation and Auger recombination involving traps in semiconductors , 1980 .
[8] H. Kostial,et al. Ionization of low donor levels and recombination of hot electrons in n‐Si at low temperatures , 1979 .
[9] D. M. Larsen. Inhomogeneous broadening of the Lyman-series absorption of simple hydrogenic donors , 1976 .
[10] H. Levinstein,et al. Recombination Cross Section for Holes at a Singly Ionized Copper Impurity in Germanium , 1972 .
[11] R. Brown,et al. Low-Temperature Recombination of Electrons and Donors in n-Type Germanium and Silicon , 1967 .
[12] S. H. Koenig,et al. Electrical Conduction in n-Type Germanium at Low Temperatures , 1962 .