Investigation of the interface manipulation in SiC(100) on Si(100) with isovalent impurities

SIMS and transmission electron microscopy studies revealed an improvement of the SiC/Si(100) heterostructure properties if isovalent atoms with larger atomic dimensions than Si and C were used to modify the interface. The Ge incorporation at the interface suppresses the outdiffusion of Si from the substrate to the surface of the growing SiC layer and, therefore, impedes surface and interface roughening as well as the formation of voids at the SiC/Si interface. SIMS measurements obtained revealed that Ge remains at SiC/Si interface independently of the predeposited amount on Si(100) substrates. Copyright © 2006 John Wiley & Sons, Ltd.